2SA2180

Series: -
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 50V
Mounting Type: Through Hole
Frequency - Transition: 130MHz
Power - Max: 2W
Current - Collector (Ic) (Max): 5A
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: TO-220ML
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 125mA, 2V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 125mA, 2.5A


Features:

• Adoption of MBIT processes.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.




Application

• High-speed switching applications (switching regulator, driver circuit).




Pinout






Specifications

Absolute maximum ratings
VCEO [V]	50
IC [A]	5
PC Tc=25°C [W]	20

Electrical characteristics
hFE min	200
hFE max	500
VCE [V]	2
IC [A]	0.125
VCE (sat) max [V]	0.5
IC [A]	7.5
IB [A]	0.375
fT typ [MHz]	120

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		-50	V
Collector-to-Emitter Voltage	VCEO		-50	V
Emitter-to-Base Voltage	VEBO		-6	V
Collector Current	IC		-5	A
Collector Current (Pulse)	ICP		-8	A
Base Current	IB		-1	A
Collector Dissipation	PC		2	W
		Tc=25	20	W
Junction Temperature	Tj		150
Storage Temperature	Tstg		55 to +150