Transistors Bipolar (BJT) BIP PNP 2A 50V
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 50 V |
Emitter- Base Voltage VEBO : | - 6 V | DC Collector/Base Gain hfe Min : | 200 mA |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Bulk |
Absolute maximum ratings | |
---|---|
VCEO [V] | 50 |
IC [A] | 2 |
PC [W] | 1 |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.1 |
VCE (sat) typ [V] | 0.2 |
VCE (sat) max [V] | 0.4 |
IC [A] | 1 |
IB [mA] | 50 |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
-50 |
V | |
Collector-to-Emitter Voltage |
VCEO |
-50 |
V | |
Emitter-to-Base Voltage |
VEBO |
-6 |
V | |
Collector Current |
IC |
-2 |
A | |
Collector Current (Pulse) |
ICP |
-4 |
A | |
Base Current |
IB |
-400 |
mA | |
Collector Dissipation |
PC |
1 |
W | |
Junction Temperature |
Tj |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |