Features: • Adoption of MBIT process.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.PinoutSpecifications SYMBOL PARAMETER Conditi...
2SA2112: Features: • Adoption of MBIT process.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• DC-DC converter, rela...
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SYMBOL | PARAMETER | Conditions | RATING | UNIT |
VCBO | Collector to base voltage | -50 | V | |
VCES | Collector to emitter voltage | -50 | V | |
VCEO | Collector-to-Emitter Voltage | -50 | V | |
VEBO | Emitter to base voltage | -6 | V | |
ICP | Collector Current (Pulse) | -6 | mA | |
IC | Collector current | -3 | A | |
IB | Base Current | -600 | mA | |
PC | Collector dissipation | 1 | mW | |
Tj | Junction temperature | 150 | ||
Tstg | Storage temperature | -55to~150 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 50 |
IC [A] | 3 |
PC [W] | 1 |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.1 |
VCE (sat) typ [V] | 0.26 |
VCE (sat) max [V] | 0.7 |
IC [A] | 2 |
IB [mA] | 100 |