Application·High DC current gain: hFE = 200 to 500 (IC = −0.5 A)·Low collector-emitter saturation: VCE (sat) = −0.27 V (max)·High-speed switching: tf = 55 ns (typ.)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter vol...
2SA2097: Application·High DC current gain: hFE = 200 to 500 (IC = −0.5 A)·Low collector-emitter saturation: VCE (sat) = −0.27 V (max)·High-speed switching: tf = 55 ns (typ.)Specifications Ch...
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Characteristics | Symbol | Rating | Unit | |
Collector-base voltage | VCBO | -50 | V | |
Collector-emitter voltage | VCEO | -50 | V | |
Emitter-base voltage | VEBO | -7 | V | |
Collector current | DC | IC | -5 | A |
Pulse | ICP | -10 | ||
Base current | IB | -0.5 | A | |
Collector power dissipation |
Ta = 25 | Pc | 1 | W |
Tc = 25 | 20 | |||
Junction temperature | Tj | 150 | ||
Storage temperature range | Tstg | -55 to 150 |