Application• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)• Low collector-emitter saturation voltage: VCE (sat) = −0.2 (max)• High-speed switching: tf = 90 ns (typ.)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 ...
2SA2056: Application• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)• Low collector-emitter saturation voltage: VCE (sat) = −0.2 (max)• High-speed switching: tf = 90 ns (t...
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Characteristics | Symbol | Rating | Unit | |
Collector-base voltage | VCBO | -50 | V | |
Collector-emitter voltage | VCEO | -50 | V | |
Emitter-base voltage | VEBO | -7 | V | |
Collector current | DC | IC | -2.0 | A |
Pulse | ICP | -3.5 | ||
Base current | IB | -200 | mA | |
Collector power dissipation |
t = 10 s | PC (Note 1) |
1000 | mW |
DC | 625 | |||
Junction temperature | Tj | 150 | ||
Storage temperature range | Tstg | -55 to 150 |