Features: • Adoption of FBET, MBIT process.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.• High allowable power dissipation.Application• DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.Pinou...
2SA2039: Features: • Adoption of FBET, MBIT process.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.• High allowable power dissi...
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Absolute maximum ratings | |
---|---|
VCEO [V] | 50 |
IC [A] | 5 |
PC [W] | 15
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.5 |
VCE (sat) typ [V] | 0.255 |
VCE (sat) max [V] | 0.43 |
IC [A] | 2 |
IB [mA] | 100 |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
()80 |
V | |
Collector-to-Emitter Voltage |
VCEO |
()80 |
V | |
Collector-to-Emitter Voltage |
VCEO |
(--)50 |
V | |
Emitter-to-Base Voltage |
IEBO |
()6 |
V | |
Drain Current |
IC |
()5 |
A | |
Collector Current (Pulse) |
ICP |
()7.5 |
A | |
Base Current |
IB |
(--)1.2 |
A | |
Allowable Power Dissipation |
PD |
2 |
W | |
Tc=25°C |
0.8 |
W | ||
Channel Temperature |
Tj |
15 |
°C | |
Storage Temperature |
Tstg |
55 to +150 |
°C |