2SA2029M3T5G

Transistors Bipolar (BJT) 100mA 60V PNP

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SeekIC No. : 00205210 Detail

2SA2029M3T5G: Transistors Bipolar (BJT) 100mA 60V PNP

floor Price/Ceiling Price

US $ .04~.07 / Piece | Get Latest Price
Part Number:
2SA2029M3T5G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.07
  • $.07
  • $.05
  • $.04
  • Processing time
  • 15 Days
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  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 120 at 1 mA at 6 V Configuration : Single
Maximum Operating Frequency : 140 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-723
Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 6 V
Maximum DC Collector Current : 0.1 A
Package / Case : SOT-723
Maximum Operating Frequency : 140 MHz
DC Collector/Base Gain hfe Min : 120 at 1 mA at 6 V


Features:

• Reduces Board Space
• High hFE, 210−460 (Typical)
• Low VCE(sat), < 0.5 V
• ESD Performance: Human Body Model; > 2000 V, Machine Model; > 200 V
• Available in 4 mm, 8000 Unit Tape & Reel
• This is a Pb−Free Device



Pinout

  Connection Diagram


Specifications

Rating
Symbo
Value
Unit
Collector−Base Voltage
V(BR)CBO
−60
Vdc
Collector−Emitter Voltage
V(BR)CEO
−50
Vdc
Emitter−Base Voltage
V(BR)EBO
−6.0
Vdc
Collector Current − Continuous
IC
−100
mAdc



Description

This PNP transistor 2SA2029M3T5G is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium.




Parameters:

Technical/Catalog Information2SA2029M3T5G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max265mW
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Frequency - Transition140MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-723
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SA2029M3T5G
2SA2029M3T5G
2SA2029M3T5GOSCT ND
2SA2029M3T5GOSCTND
2SA2029M3T5GOSCT



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