Features: · Adoption of MBIT processes.· Large current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· High allowable power dissipation.Application· Relay drivers, lamp drivers, motor drivers, strobes.PinoutSpecifications Parameter Symbol Conditions ...
2SA2022: Features: · Adoption of MBIT processes.· Large current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· High allowable power dissipation.Application· Relay drivers,...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
(50)60 |
V | |
Collector-to-Emitter Voltage |
VCEO |
()50 |
V | |
Emitter-to-Base Voltage |
VEBO |
()6 |
V | |
Collector Current |
IC |
()7 |
A | |
Collector Current (Pulse) |
ICP |
()10 |
A | |
Base Current |
IB |
()1.2 |
A | |
Collector Dissipation |
PC |
2 |
W | |
Tc=25 |
18 |
W | ||
Junction Temperature |
Tj |
150 |
||
Storage Temperature |
Tstg |
55 to +150 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 50 |
IC [A] | 7 |
PC Tc=25°C [W] | 18 |
Electrical characteristics | |
---|---|
hFE min | 150 |
hFE max | 300 |
VCE [V] | 2 |
IC [A] | 1 |
VCE (sat) max [V] | 0.3 |
IC [A] | 2.5 |
IB [A] | 0.125 |
fT typ [MHz] | 290 |