2SA2018TL

Transistors Bipolar (BJT) PNP 12V 0.5A

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SeekIC No. : 00206506 Detail

2SA2018TL: Transistors Bipolar (BJT) PNP 12V 0.5A

floor Price/Ceiling Price

US $ .09~.29 / Piece | Get Latest Price
Part Number:
2SA2018TL
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.29
  • $.21
  • $.15
  • $.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : - 12 V
Emitter- Base Voltage VEBO : - 6 V Maximum DC Collector Current : - 1 A
DC Collector/Base Gain hfe Min : 270 Configuration : Single
Maximum Operating Frequency : 260 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-75A
Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 6 V
Maximum DC Collector Current : - 1 A
DC Collector/Base Gain hfe Min : 270
Collector- Emitter Voltage VCEO Max : - 12 V
Maximum Operating Frequency : 260 MHz
Package / Case : SC-75A


Specifications

  Connection Diagram


Description

The 2SA2018TL is one member of the 2SA2018 family which is designed as the low frequency transistor device that can be used in switching, for muting applications. Features of the 2SA2018TL are:(1)A collector current is large;(2)Collector saturation voltage is low VCE (sat) 250 mA At Ic = 200mA / IB = 10 mA.

The absolute maximum ratings of the 2SA2018TL can be summarized as:(1)Collector-base voltage: 15 V;(2)Collector-emitter voltage: 12 V;(3)Collector current: 500 mA or 1 A;(4)Collector power dissipation: 150 mW;(5)Junction temperature: 150 ;(6)Storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector-base breakdown voltage: 15 V;(2)Collector-emitter breakdown voltage: 12 V;(3)Emitter-base breakdown voltage: 6 V;(4)Collector cutoff current: 100 nA;(5)DC current transfer ratio: 270 to 680;(6)Collector-emitter saturation voltage: 100 to 250 mV;(7)Transition frequency: 260 MHz;(8)Output capacitance: 6.5 pF. If you want to know more information such as the electrical characteristics about the 2SA2018TL, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog Information2SA2018TL
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)12V
Current - Collector (Ic) (Max)500mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 200mA
Frequency - Transition260MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-75-3, SOT-416, EMT3
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SA2018TL
2SA2018TL
2SA2018TLCT ND
2SA2018TLCTND
2SA2018TLCT



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