Features: · Adoption of FBET and MBIT processes.· High current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall package facilitates miniaturization in end products.· High allowable power dissipation.Application· Relay drivers, lamp drivers, motor driver...
2SA2013: Features: · Adoption of FBET and MBIT processes.· High current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall package facilitates miniaturization in en...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-base voltage |
VCBO |
(50)80 |
V | |
Collector-emitter voltage |
VCEO |
()50 |
V | |
Emitter-base voltage |
VEBO |
()6 |
V | |
Collector current |
IC |
()4 |
A | |
Collector current(Pulse) |
ICP |
()7 |
A | |
Base Current |
IB |
()600 |
mA | |
Collector Dissipation |
PC |
Mounted on a ceramic board (250mX0.8mm) |
1.3 |
W |
Tc=25°C |
3.5 |
W | ||
Junction temperature |
Tj |
150 |
||
Storage temperature |
Tstg |
55 to +150 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 50 |
IC [A] | 4 |
PC [W] | 3.5
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.5 |
VCE (sat) typ [V] | 0.2 |
VCE (sat) max [V] | 0.34 |
IC [A] | 2 |
IB [mA] | 100 |