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Features: · Adoption of MBIT processes.· Large current capacitance.· Low collector-to-emitter saturation voltage.· Ultrasmall-sized package permitting applied sets to be made small and slim.· High allowable power dissipation.Application· Relay drivers, lamp drivers, motor drivers, strobes.PinoutSp...

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SeekIC No. : 004220390 Detail

2SA2012: Features: · Adoption of MBIT processes.· Large current capacitance.· Low collector-to-emitter saturation voltage.· Ultrasmall-sized package permitting applied sets to be made small and slim.· High a...

2SA2012 Data Sheet

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Part Number:: 2SA2012
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/10/30

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Recent History
What is this?

2SA2004 evaluate
Features: • High forward current transfer ratio hFE• Satisfactory linearity of forward...
2SA2005 evaluate
Features: ·Electrical characteristics of DC current gain hFE is flat.·High breakdown voltage. (BVC...
2SA2007 evaluate
Features: 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A)2) Low saturation vol...

Product Details

Description

Features:

· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· Ultrasmall-sized package permitting applied sets to be made small and slim.
· High allowable power dissipation.

Application

· Relay drivers, lamp drivers, motor drivers, strobes.

Pinout

Specifications

Absolute maximum ratings
VCEO [V]	30
IC [A]	5
PC [W]	3.5 Tc=25°C

Electrical characteristics
hFE min	200
hFE max	560
VCE [V]	2
IC [A]	0.5
VCE (sat) typ [V]	0.17
VCE (sat) max [V]	0.26
IC [A]	2.5
IB [mA]	125

Parameter	Symbol	Conditions	Limits	Unit
Collector-base voltage	V_CBO		(30)40	V
Collector-emitter voltage	V_CEO		()30	V
Emitter-base voltage	V_EBO		()5	V
Collector current	I_C		()5	mA
Collector current(Pulse)	I_CP		()8	mA
Base Current	I_B		()600	mA
Collector Dissipation	P_C	Mounted on a ceramic board (250mm2X0.8mm)	1.3	W
Collector Dissipation	P_C	Tc=25°C	3.5	W
Junction temperature	T_j		150
Storage temperature	T_stg		55 to +150

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2SA2012

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