Features: · Adoption of FBET, MBIT processes.· Large current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall package facilitates miniaturization in end products.Specifications Parameter Symbol Conditions Ratings Unit Collector-base vo...
2SA1973: Features: · Adoption of FBET, MBIT processes.· Large current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall package facilitates miniaturization in end ...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-base voltage |
VCBO |
()30 |
V | |
Collector-emitter voltage |
VCEO |
()25 |
V | |
Emitter-base voltage |
VEBO |
()6 |
V | |
Collector current |
Ic |
()1 |
A | |
Collector Current (Pulse) |
ICP |
()3 |
A | |
Base Current |
IB |
()200 |
mA | |
Collector Dissipation |
PC |
Mounted on a ceramic board (250mm2´0.8mm) |
250 |
W |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
-55 to +150 |
°C |