2SA1953

The 2SA1953 is designed as one kind of transistor silicon NPN epitaxial type (PCT process) with two points of features:(1)low saturation voltage: Vce(sat)=-15 mV(typ.) @ Ic=-10 mA/IB=0-.5 mA;(2)large collector current:Ic=-500 mA(max.). It has two points of applications:the general purpose amplifier applications and switching and muting switch application.

The absolute maximum ratings of the 2SA1953 can be summarized as:(1)sollecor-base voltage:-15 V;(2)collector-emitter voltage:-12 V;(3)emitter-base voltage:-5 V;(4)collector current:-500 mA;(5)base current:-50 mA;(6)collector power dissipation:150 mW;(7)junction temperature:125;(8)storage temperature range:-55 to +125. You should also know that there are some restrictions on product use. Here show them to you. The first is that the information contained herein is subject to change without notice. The second is that TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. If you want to know more information such as the electrical characteristics about the 2SA1953, please download the datasheet in www.seekic.com or www.chinaicmart.com.