2SA1937

The 2SA1937 is a kind of transistor. It is silicon PNP triple diffused type. The device is designed for high voltage switching applications. It features high voltage (VCEO=-600 V).

What comes next is about the absolute maximum ratings of 2SA1937 at Ta=25: (1)collector to base voltage, VCBO: -600 V; (2)collector to emitter voltage, VCEO: -600 V; (3)emitter to base voltage, VEBO: -7 V; (4)collector current, IC: -0.5 A when DC and -1 A when pulse; (5)base current, IB: -0.25 A; (6)collector dissipation, PC: 1 W at Ta=25 and 10 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.

The following is about the electrical characteristics of 2SA1937 at Ta=25: (1)collector-emitter breakdown voltage, V(BR)CEO: -600 V min at IC=-10 mA, IB=0; (2)collector cutoff current, ICBO: -10A max at VCB=-600 V, IE=0; (3)emittor cutoff current, IEBO: -1.0A max at VEB=-7 V, IC=0; (4)DC current gain, hFE: 100 min and 500 max at VCE=-5 V, IC=-20 mA; 80 min and 450 max at VCE=-5 V, IC=-100 mA; (5)transition frequency, fT: 35 MHz typ at VCE=-5 V, IC=-50 mA; (6)output capacitance, Cob: 24 pF typ at VCB=-10 V, f=1 MHz, IE=0; (7)collector-emitter saturation voltage, VCE(sat): -1.0 V max at IC=-100 mA, IB=-10 mA; (8)base-emitter saturation voltage, VBE(sat): -0.76 V typ and -0.9 V max at IC=-100 mA, IB=-10 mA.