2SA1933

The 2SA1933 is a kind of transistor. It is silicon PNP epitaxial type (PCT process). The device is designed for high current switching applications. There are some features as follows: (1)low saturation voltage: VCE(sat)=-0.4 V max at IC=-3 A; (2)high speed switching time: tstg=1.0s typ; (3)complementary to 2SC5175.

What comes next is about the absolute maximum ratings of 2SA1933 at Ta=25: (1)collector to base voltage, VCBO: -60 V; (2)collector to emitter voltage, VCEO: -50 V; (3)emitter to base voltage, VEBO: -5 V; (4)collector current, IC: -5 A; (5)base current, IB: -1 A; (6)collector dissipation, PC: 1.8 W; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.

The following is about the electrical characteristics of 2SA1933 at Ta=25: (1)collector-emitter breakdown voltage, V(BR)CEO: -50 V min at IC=-10 mA, IB=0; (2)collector cutoff current, ICBO: -1.0A max at VCB=-50 V, IE=0; (3)emittor cutoff current, IEBO: -1.0A max at VEB=-5 V, IC=0; (4)DC current gain, hFE: 100 min and 320 max at VCE=-1 V, IC=-1 A; 30 min at VCE=-1 V, IC=-3 A; (5)transition frequency, fT: 60 MHz typ at VCE=-4 V, IC=-1 A; (6)output capacitance, Cob: 170 pF typ at VCB=-10 V, f=1 MHz, IE=0; (7)collector-emitter saturation voltage, VCE(sat): -0.2 V typ and -0.4 V max at IC=-3 A, IB=-0.15 A; (8)base-emitter saturation voltage, VBE(sat): -0.9 V typ and -1.2 V max at IC=-3 A, IB=-0.15 A.