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2SA1930(Q,M)

Transistors Bipolar (BJT) PNP 180V 2A Transistor

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SeekIC No. : 00206327 Detail

2SA1930(Q,M): Transistors Bipolar (BJT) PNP 180V 2A Transistor

2SA1930(Q,M) Data Sheet

floor Price/Ceiling Price

US $ .21~.34 / Piece | Get Latest Price
Part Number:
2SA1930(Q,M)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.34
  • $.28
  • $.24
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : - 180 V
Emitter- Base Voltage VEBO : - 5 V DC Collector/Base Gain hfe Min : 50
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 NIS    

Description

Maximum DC Collector Current :
Configuration :
Maximum Operating Frequency :
Packaging :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 50
Package / Case : TO-220 NIS
Collector- Emitter Voltage VCEO Max : - 180 V


Parameters:

Technical/Catalog Information2SA1930(Q,M)
VendorToshiba
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)180V
Current - Collector (Ic) (Max)2A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Frequency - Transition200MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / Case2-10R1A (TO-220 NIS)
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SA1930 Q,M
2SA1930Q,M



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