2SA1930

The 2SA1930 is a kind of transistor. It is silicon PNP epitaxial type. The device is designed for power amplifier applications and driver stage amplifier applications. There are some features as follows: (1)high transistion frequency: fT=200 MHz typ; (2)complementary to 2SC5171.

What comes next is about the absolute maximum ratings of 2SA1930 at Ta=25: (1)collector to base voltage, VCBO: -180 V; (2)collector to emitter voltage, VCEO: -180 V; (3)emitter to base voltage, VEBO: -5 V; (4)collector current, IC: -2 A; (5)base current, IB: -1 mA; (6)collector dissipation, PC: 2.0 W at Ta=25 and 20 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.

The following is about the electrical characteristics of 2SA1930 at Ta=25: (1)collector-emitter breakdown voltage, V(BR)CEO: -180 V min at IC=-10 mA, IB=0; (2)collector cutoff current, ICBO: -5.0A max at VCB=-180 V, IE=0; (3)emittor cutoff current, IEBO: -5.0A max at VEB=-5 V, IC=0; (4)DC current gain, hFE: 100 min and 320 max at VCE=-5 V, IC=-0.1 A; 50 min at VCE=-5 V, IC=-1 A; (5)transition frequency, fT: 200 MHz typ at VCE=-5 V, IC=-0.3 A; (6)output capacitance, Cob: 26 pF typ at VCB=-10 V, f=1 MHz, IE=0; (7)collector-emitter saturation voltage, VCE(sat): -0.24 V typ and -1.0 V max at IC=-1 A, IB=-0.1 A; (8)base-emitter voltage, VBE: -0.68 V typ and -1.5 V max at VCE=-5 V, IC=-1 A.