2SA1900T100Q

Transistors Bipolar (BJT) PNP 50V 1A SO-89

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SeekIC No. : 00206517 Detail

2SA1900T100Q: Transistors Bipolar (BJT) PNP 50V 1A SO-89

floor Price/Ceiling Price

US $ .12~.39 / Piece | Get Latest Price
Part Number:
2SA1900T100Q
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • 500~1000
  • Unit Price
  • $.39
  • $.31
  • $.23
  • $.16
  • $.12
  • Processing time
  • 15 Days
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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : - 50 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 120 Configuration : Single Dual Collector
Maximum Operating Frequency : 150 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-62
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : - 50 V
Emitter- Base Voltage VEBO : - 5 V
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 150 MHz
DC Collector/Base Gain hfe Min : 120
Configuration : Single Dual Collector
Package / Case : SC-62


Description

The 2SA1900T100Q is one member of the 2SA1900 family which is designed as one kind of medium power transistor that has three points of features:(1)low saturation voltage, typically VCE=-0.15V at Ic/IB=-500 mA / -50 mA;(2)collector-emitter voltage=-60V;(3)Pc=2 W (on 40 x 40 x 0.7 mm ceramic board);(4)complements the 2SC5053.

The absolute maximum ratings of the 2SA1900T100Q can be summarized as:(1)collector-base voltage:-60 V;(2)collector-emitter voltage:-50 V;(3)emitter-base voltage:-5 V;(4)collector current:-1 A or -2 A;(5)junction temperature:150;(6)storage temperature:-55 tp +150;(7)collector power dissipation:0.5 W or 2 W.

And the electrical characteristics of the 2SA1900T100Q can be summarized as:(1)collector-base breakdown voltage:-60 V;(2)collector-emitter breakdown voltage:-50 V;(3)collector cutoff current:-0.1 uA;(4)emitter cutoff current:-0.5 uA;(5)collector-emitter saturation voltage:-0.4 V;(6)DC current transfer ratio:120 to 270;(7)output capacitance:20 pF. If you want to know more information such as the electrical characteristics about the 2SA1900T100Q, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog Information2SA1900T100Q
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)1A
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 3V
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Frequency - Transition150MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-62, SOT-89, MPT3 (3 leads + Tab)
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SA1900T100Q
2SA1900T100Q
2SA1900T100QDKR ND
2SA1900T100QDKRND
2SA1900T100QDKR



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