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2SA1766

Features: · Adoption of FBET, MBIT processes.· High DC current gain (hFE=500 to 1200).· Large current capacity.· Low collector-to-emitter saturation voltage.· High VEBO.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base voltage VCBO -30 V C...

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2SA1766: Features: · Adoption of FBET, MBIT processes.· High DC current gain (hFE=500 to 1200).· Large current capacity.· Low collector-to-emitter saturation voltage.· High VEBO.PinoutSpecifications Par...

2SA1766 Data Sheet

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Part Number:
2SA1766
Supply Ability:
5000

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Product Details

Description



Features:

· Adoption of FBET, MBIT processes.
· High DC current gain (hFE=500 to 1200).
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· High VEBO.




Pinout






Specifications

Parameter
Symbol
 Conditions
Ratings
Unit
Collector-base voltage
VCBO
-30
V
Collector-emitter voltage
VCEO
-25
V
Emitter-base voltage
VEBO
-15
V
Collector current
Ic
-300
mA
Collector Current (Pulse)
ICP
-500
A
Base Current
IB
-60
mA
Collector Dissipation
PC
 Mounted on ceramic board (250mm2´0.8mm)
1.3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C


Absolute maximum ratings
VCEO [V] 25
VEBO [V] 15
IC [A] 0.3
PC [W] 1.3
When mounted on glass epoxy substrate
Electrical characteristics
hFE min 500
hFE max 1200
VCE [V] 5
IC [mA] 10
VCE (sat) typ [V] 0.12
VCE (sat) max [V] 0.5
IC [mA] 200
IB [mA] 4





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