Features: SpecificationsDescriptionThe 2SA1530A is designed as a super mini package resin sealed silicon PNP epitaxial transistor whichis for low frequency voltage application. 2SA1530A has three features.The first one isthat it would havesmall collector to emitter saturation voltage which means V...
2SA1530A: Features: SpecificationsDescriptionThe 2SA1530A is designed as a super mini package resin sealed silicon PNP epitaxial transistor whichis for low frequency voltage application. 2SA1530A has three fe...
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The 2SA1530A is designed as a super mini package resin sealed silicon PNP epitaxial transistor which is for low frequency voltage application.
2SA1530A has three features.The first one is that it would have small collector to emitter saturation voltage which means VCE(sat)=-0.3Vmax(@Ic=-100mA and IB=-10mA).The second one is that it would have excellent linearity of DC forward gain.The third one is that it would have super mini package for easy mounting.That are all its features.Some other things about its applications which contains that for Hybrid IC,small type machine low frequency voltage and also the amplify application.
Some absolute maximum ratings of 2SA1530A have been concluded into several points as follow which with condition of Ta=25°C.The first one is about its collector to base voltage which would be -60 V.The second one is about its collector to emitter voltage which would be -50 V.The third one is about its emitter to base voltage which would be -6 V.The fourth one is about its collector current which would be -150 mA.The fifth one is about its collector dissipation which would be 200 mW.The sixth one is about its junction temperature which would be +150°C.The seventh one is about its about its storage temperature which would have the minimum of -55°C and the maximum of +150 °C which means the renge would be within -55 to +150°C.That are all the important maximum ratings.
Also some important electrical characteristics about 2SA1530A.Its C to E break down voltage would have the minimum of -50V.Its collector cut off current would have the maximum of -0.1 A.Its emitter cut off current would also have the maximum of -0.1 A.Its DC forward current gain should be with 120 to 560 with condition of Vce = -6V,Ic= -1mA and should have the minimum of 70 with condition of Vce= -6V,Ic= -0.1mA.Its C to E saturation Vlotage should have the maximum of -0.3V.Its gain bandwidth product should have the typical of 200 MHz.Its collector output capacitance should have the typical of 4 pF.The last one is about its noise figure which would have the maximum of 20 dB.