Features: SpecificationsDescription The 2SA1483(TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)) is used in high frequency amplifier applications(High transition frequency: fT = 200 MHz (typ.)), high speed switcHing applications and video amplifier applications, which also low collecto...
2SA1483: Features: SpecificationsDescription The 2SA1483(TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)) is used in high frequency amplifier applications(High transition frequency: fT = 200 MHz ...
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The 2SA1483(TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)) is used in high frequency amplifier applications(High transition frequency: fT = 200 MHz (typ.)), high speed switcHing applications and video amplifier applications, which also low collector output capacitance: Cob = 3.5 pF (typ.), complementary to 2SC3803.
Some parameters of 2SA1483 are got at Ta(=25°C), VCBO(Collector-base voltage)=-60V, VCEO(Collector-emitter voltage)=-45V, VEBO(Emitter-base voltage)=-5V, IB(Continuous base current)=-50mA, IC(Continuous collector current)=-200mA, PC(Collector power dissipation)/PC(Mounted on a ceramic substrate (250 mm2*0.8 t))=500/1000mW, Tstg(Storage temperature range)=-55 to 150°C, Tj (Junction temperature)=150°C. Some about the electrical properties are also got at Ta (25°C), ICBO(Collector cut-off current, VCB = -45 V, IE = 0)=-0.1A, IEBO(Emitter cut-off current, VEB = -5 V, IC = 0)=-0.1A, hFE (1)(VCE = -1 V, IC = -10 mA, R: 40 to 80, O: 70 to 140, Y: 120 to 240)/hFE (2)(VCE = -3 V, IC = -200 mA)=40-240/20---, VCE (sat) (Collector-emitter saturation voltage, IC = -100 mA, IB = -10 mA)=-0.3 V, VBE (sat) (Base-emitter saturation voltage, IC = -100 mA, IB = -10 mA)=-1.0 V, fT(Transition frequency, VCE = -10 V, IC = -10 mA)=100(Min)/200(Typ.)MHz, Re (hie)(Input impedance (real part), VCE = -10 V, IE = 10 mA, f = 200 MHz)=120, Cob(Collector output capacitance, VCB = -10 V, IE = 0, f = 1 MHz)=3.5(Typ.)/5(Max)pF, Switching time(ton(Turn-on time)/tstg(Storage time)/tf(Fall time))=40/250/30ns.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SA1483 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).