PinoutSpecifications Absolute maximum ratings VCBO [V] 300 VCEO [V] 300 IC [A] 0.1 PC [W] 7 Electrical characteristics hFE min 40 hFE max 320 VCE [V] 10 IC [mA] 10 fT typ [MHz] 150 VCE [V] 30 IC [mA] 10 VCE (sat) typ [V] -...
2SA1480: PinoutSpecifications Absolute maximum ratings VCBO [V] 300 VCEO [V] 300 IC [A] 0.1 PC [W] 7 Electrical characteristics hFE min 40 hFE max 320 V...
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Absolute maximum ratings | |
---|---|
VCBO [V] | 300 |
VCEO [V] | 300 |
IC [A] | 0.1 |
PC [W] | 7 |
Electrical characteristics | |
---|---|
hFE min | 40 |
hFE max | 320 |
VCE [V] | 10 |
IC [mA] | 10 |
fT typ [MHz] | 150 |
VCE [V] | 30 |
IC [mA] | 10 |
VCE (sat) typ [V] | - |
VCE (sat) max [V] | 0.6 |
IC [mA] | 20 |
IB [mA] | 2 |
The 2SA1480 is a PNP epitaxial planar type silicon transistors.
Features of the 2SB1076M are:(1)adoption of MBIT process;(2)high breakdown voltage(VCEO300v);(3)small reverse transfer capactiance and eccellent high frequency chracteristic Cre=1.8pF(NPN),2.3pF(PNP).
The absolute maximum ratings of the 2SB1076M can be summarized as:(1)collector to base voltage,VCBO:-300V;(2)Collector to emitter voltage,VCER:-300V;(3)Base to emitter voltage,VEBO:-5V;(4)Collector current:IC=-100mA;(5)Collector dissipation:PC=1.5W,PC=7W(TC=25);(6junction temperature,Tj:150;(7)Storage temperature range,Tstg:-55 to 150;(8)peal collector current,icp:-200mA.
If you want to know more information such as the electrical characteristics about the 2SB1076M, please download the datasheet in www.seekic.com or www.chinaicmart.com .