2SA1452A

DescriptionThe 2SA1452A is designed as toshiba transistor silicon PNP epitaxial type (PCT process) for high speed, high current switching applications.2SA1452A has three features. (1)Low collector saturation voltage which would be max -0.4V at Ic=-6A. (2)High speed switching time would be 1.0us ty...

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SeekIC No. : 004220048 Detail

2SA1452A: DescriptionThe 2SA1452A is designed as toshiba transistor silicon PNP epitaxial type (PCT process) for high speed, high current switching applications.2SA1452A has three features. (1)Low collector s...

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Part Number:
2SA1452A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Description



Description

The 2SA1452A is designed as toshiba transistor silicon PNP epitaxial type (PCT process) for high speed, high current switching applications.

2SA1452A has three features. (1)Low collector saturation voltage which would be max -0.4V at Ic=-6A. (2)High speed switching time would be 1.0us typ. (3)Complementary to 2SC3710A. Those are all the main features.

Some absolute maximum ratings of 2SA1452A have been concluded into several points as follow. (1)Its collector to base voltage would be -80V. (2)Its collector to emitter voltage would be -80V. (3)Its emitter to base voltage would be -6V. (4)Its collector current would be -12A. (5)Its base current would be -2A. (6)Its collector power dissipation would be 30W. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SA1452A are concluded as follow. (1)Its collector cutoff current would be max -10uA. (2)Its emitter cutoff current would be max -10uA. (3)Its collector to emitter breakdown voltage would be min -80V. (4)Its DC current gain would be min 70 and max 240 with conditions of Vce=-1V and Ic=-1A and it would be min 40 with conditions of Vce=-1V and Ic=-6A. (5)Its saturation voltage would be typ -0.2V and max -0.4V for collector to emitter and would be typ -0.9V and max -1.2V for base to emitter. (6)Its transition frequency would be typ 50MHz. (7)Its collector output capacitance would be typ 400pF. (8)Its switching time would be typ 0.3us for turn-on time and would be typ 1.0us for storage time and would be typ 0.5us for fall time.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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