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2SA1436

Features: · Adoption of MBIT process.· High DC current gain (hFE=500 to 1200).· Large current capacity.· Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).· High VEBO (VEBO³15V).Application· AF amplifier, various drivers, muting circuitPinoutSpecifications Parameter Symb...

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2SA1436: Features: · Adoption of MBIT process.· High DC current gain (hFE=500 to 1200).· Large current capacity.· Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).· High VEBO (VEBO³15V).A...

2SA1436 Data Sheet

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Part Number:
2SA1436
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Adoption of MBIT process.
· High DC current gain (hFE=500 to 1200).
· Large current capacity.
· Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
· High VEBO (VEBO³15V).




Application

· AF amplifier, various drivers, muting circuit




Pinout






Specifications

Parameter
Symbol
 Conditions
Ratings
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-15
V
Collector current
Ic
-200
mA
Collector Current (Pulse)
ICP
-300
mA
Collector Dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C


Absolute maximum ratings
VCEO [V] 50
VEBO [V] 15
IC [A] 0.2
PC [W] 0.6
Electrical characteristics
hFE min 500
hFE max 1200
VCE [V] 5
IC [mA] 10
VCE (sat) typ [V] 0.2
VCE (sat) max [V] 0.5
IC [mA] 100
IB [mA] 2





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