Features: · Adoption of FBET, MBIT processes.· High breakdown voltage and large current capacity.· Very small size making it easy to provide highdensity hybrid ICs.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base voltage VCBO ()180 V Coll...
2SA1419: Features: · Adoption of FBET, MBIT processes.· High breakdown voltage and large current capacity.· Very small size making it easy to provide highdensity hybrid ICs.PinoutSpecifications Paramete...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-base voltage |
VCBO |
()180 |
V | |
Collector-emitter voltage |
VCEO |
()160 |
V | |
Emitter-base voltage |
VEBO |
()6 |
V | |
Collector current |
Ic |
()1.5 |
mA | |
Collector Current (Pulse) |
ICP |
()2.5 |
mA | |
Collector Dissipation |
PC |
Moutned on ceramic board (250mm2´0.8mm) |
500 1.5 |
W |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
-55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VCBO [V] | 180 |
VCEO [V] | 160 |
IC [A] | 1.5 |
PC [W] | 0.5 |
Electrical characteristics | |
---|---|
hFE min | 100 |
hFE max | 400 |
VCE [V] | 5 |
IC [mA] | 100 |
fT typ [MHz] | 120 |
VCE [V] | 10 |
IC [mA] | 50 |
VCE (sat) typ [V] | 0.2 |
VCE (sat) max [V] | 0.5 |
IC [mA] | 500 |
IB [mA] | 50 |