Features: Adoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current CapacityFast Switching SpeedPinoutSpecifications Parameter Symbol Ratings Unit Collector-Emitter Voltage VCEO -180 V Collector-Base Voltage VCBO -160 V Emitter-Base Voltage ...
2SA1418: Features: Adoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current CapacityFast Switching SpeedPinoutSpecifications Parameter Symbol Ratings Unit Collector-Emitter V...
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Parameter |
Symbol |
Ratings |
Unit |
Collector-Emitter Voltage |
VCEO |
-180 |
V |
Collector-Base Voltage |
VCBO |
-160 |
V |
Emitter-Base Voltage |
VEBO |
-6 |
V |
Collector Current (DC) |
IC |
-0.7 |
A |
Collector Current (Pulse) |
ICP |
-1.5 | |
Power Dissipation |
PC PC * |
500 1.3 |
mW W |
Junction Temperature |
Tj |
150 |
|
Storage Temperature |
Tstg |
-55 to 150 |
Absolute maximum ratings | |
---|---|
VCBO [V] | 180 |
VCEO [V] | 160 |
IC [A] | 0.7 |
PC [W] | 1.3 |
Electrical characteristics | |
---|---|
hFE min | 100 |
hFE max | 400 |
VCE [V] | 5 |
IC [mA] | 100 |
fT typ [MHz] | 120 |
VCE [V] | 10 |
IC [mA] | 50 |
VCE (sat) typ [V] | 0.2 |
VCE (sat) max [V] | 0.5 |
IC [mA] | 250 |
IB [mA] | 25 |