Features: · Adoption of FBET process.· High breakdown voltage (VCEO=160V).· Excellent linearity of hFE and small Cob.· Fast switching speed.· Very small size marking it easy to provide highdensity, small-sized hybrid ICs.PinoutSpecifications Parameter Symbol Conditions Ratings Unit ...
2SA1415: Features: · Adoption of FBET process.· High breakdown voltage (VCEO=160V).· Excellent linearity of hFE and small Cob.· Fast switching speed.· Very small size marking it easy to provide highdensity, ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-base voltage |
VCBO |
()180 |
V | |
Collector-emitter voltage |
VCEO |
()160 |
V | |
Emitter-base voltage |
VEBO |
()5 |
V | |
Collector current |
Ic |
()140 |
mA | |
Collector Current (Pulse) |
ICP |
()200 |
mA | |
Collector Dissipation |
PC1 PC2 |
Moutned on ceramic board (250mm2´0.8mm) |
500 1.3 |
mW |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
-55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VCBO [V] | 180 |
VCEO [V] | 160 |
IC [A] | 0.14 |
PC [W] | 1.3 |
Electrical characteristics | |
---|---|
hFE min | 140 |
hFE max | 400 |
VCE [V] | 5 |
IC [mA] | 10 |
fT typ [MHz] | 150 |
VCE [V] | 10 |
IC [mA] | 10 |
VCE (sat) typ [V] | 0.14 |
VCE (sat) max [V] | 0.4 |
IC [mA] | 50 |
IB [mA] | 5 |