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2SA1382

DescriptionThe 2SA1382 is a PNP silicon epitaxial palanr type transistors. Features of the 2SA1382 are:(1)high DC current gain:hFE=150~400(LC=-0.5A);(2)low saturation voltage:VCE(sat)=-0.5V(MAX.)(IC=-1A);(3)high speed switching:Tstg=1.0s(TYP.). The absolute maximum ratings of the 2SA1382 can be ...

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SeekIC No. : 004220001 Detail

2SA1382: DescriptionThe 2SA1382 is a PNP silicon epitaxial palanr type transistors. Features of the 2SA1382 are:(1)high DC current gain:hFE=150~400(LC=-0.5A);(2)low saturation voltage:VCE(sat)=-0.5V(MAX.)(I...

2SA1382 Data Sheet

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Part Number:
2SA1382
Supply Ability:
5000

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  • 1~5000
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Description

The 2SA1382 is a PNP silicon epitaxial palanr type transistors.

Features of the 2SA1382 are:(1)high DC current gain:hFE=150~400(LC=-0.5A);(2)low saturation voltage:VCE(sat)=-0.5V(MAX.)(IC=-1A);(3)high speed switching:Tstg=1.0s(TYP.).

The absolute maximum ratings of the 2SA1382 can be summarized as:(1)collector to base voltage,VCBO:-50V;(2)Collector to emitter voltage,VCER:-50V;(3)Base to emitter voltage,VEBO:-7V;(4)Collector current,DC:IC=-2A;(5)Collector dissipation:PC=900mW;(6junction temperature,Tj:150;(7)Storage temperature range,Tstg:-55 to 150;(8)collector current,peak:ICP=-200mA;(9)base current,IB:-1A.

If you want to know more information such as the electrical characteristics about the 2SA1382, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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