2SA1381/KSA1381

      The 2SA1381/KSA1381 (PNP Epitaxial Silicon Transistor) is used in audio, voltage amplifier and current source, general purpose amplifier, and CRT display, video output, and which possesses high voltage (VCEO= -300V), low reverse transfer capacitance (Cre= 2.3pF at VCB = -30V), high frequency(150MHz), excellent gain linearity for low THD, full thermal and electrical Spice models are available and complement to 2SC3503/KSC3503.
      Some parameters of the 2SA1381/KSA1381 are got at Ta(=25°C, unless otherwise note), BVCBO(Collector-base voltage)=-300V, BVCEO(Collector-emitter voltage)=-300V, BVEBO(Emitter-base voltage)=-5V, IC(Collector Current(DC))=-100mA, ICP(Collector Current(Pulse))=-200mA, PC(Total Device Dissipation, TC=25°C)/(TC=125°C)=7/1.2mW, TJ , Tstg(Junction and Storage temperature )=-55 to 150°C. Some about the electrical properties of the 2SA1381/KSA1381 are also got at Ta(25°C unless otherwise noted), ICBO(Collector cut-off current, VCB =-200V, IE = 0)=-0.1A(Max.), IEBO(Emitter cut-off current, VEB = -4V, IC = 0)=-0.1A, hFE (DC Current Gain, VCE = -10 V, IC = -10 mA,)=40(min)/320(max), VCE (sat) (Collector-emitter saturation voltage, IC = -20mA, IB = -2A)= -0.6(Max)V, VBE(Base-emitter saturation voltage, IC = -20m A, IB = -2mA  )=-1(max)V, fT(Transition frequency, VCE = -30V, IC = -10mA)=150(Typ.)MHz, Cob(Collector output capacitance, VCB = -30 V, IE = 0, f = 1 MHz)=3.1(Typ)pF, Cre (Reverse Transfer Capacitance)=2.3(Typ.)pF, BVCBO(Collector-Base Breakdown Voltage, IC = - 10µA, IE = 0)=-300(Min)V, BVCEO(Collecto- Emitter Breakdown Voltage, IC = - 1mA, IB = 0)=-300V, BVEBO(Emitter-Base Breakdown Voltage, IE = - 10µA, IC = 0)=-5V. And some other parameters are RJC(Thermal Resistance, Junction to Case)=17.8°C/W.
      Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SA1381/KSA1381 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).