2SA1376

The 2SA1376 is designed as one kind of PNP silicon transistor that is designed for general-purpose applications requiring high breakdown voltages. Features of the 2SA1376 are:(1)high breakdown voltage: VCEO= -180 V/ -200 V;(2)good hFE linearity;(3)a complementary pair with 2SC3478.

The absolute maximum ratings of the 2SA1376 can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: 150 maximum;(3)total power dissipation: 750 mW;(4)collector to base voltage: -200 V;(5)collector to emitter voltage: -180 / -200 V;(6)emitter to base voltage: -5.0 V;(7)collector current (DC): -100 mA;(8)collector current (pulse): -200 mA;(9)base current (DC): -20 mA. If you want to know more information such as the electrical characteristics about the 2SA1376, please download the datasheet in www.seekic.com or www.chinaicmart.com .