2SA1371E-AE

The 2SA1371E-AE is designed as one kind of PNP / NPN epitaxial planar silicon transistor that is designed for high-definition CRT display, video output applications. Features of the device are:(1)high breakdown voltage: VCEO >/= 300 V;(2)small reverse transfer capacitance and excellent high frequency characteristic, 2.3 pF (PNP);(3)adoption of MBIT process.

The absolute maximum ratings of the 2SA1371E-AE can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: 150 maximum;(3)total power dissipation: 1000 mW;(4)collector to base voltage: 300 V;(5)collector to emitter voltage: 300 V;(6)emitter to base voltage: 5.0 V;(7)collector current (DC): 100 mA;(8)collector current (pulse): 200 mA;(9)base current (DC): -20 mA.

The electrical characteristics of the 2SA1371E-AE can be summarized as:(1)collector cutoff current: 0.1 uA;(2)emitter curoff current: 0.1 uA;(3)DC current gain: 40 to 320;(4)gain-bandwidth product: 150 MHz;(5)C-E saturation voltage: 0.6 V;(6)B-E saturation voltage: 1.0 V;(7)C-B breakdown voltage: 300 V;(8)C-E breakdown voltage: 300 V;(9)E-B breakdown voltage: 5 V;(10)output capacitance: 2.6 pF. If you want to know more information such as the electrical characteristics about the 2SA1371E-AE, please download the datasheet in www.seekic.com or www.chinaicmart.com .