2SA1369-T11-1G

The 2SA1369-T11-1G is designed as one kind of PNP / NPN epitaxial planar silicon transistor that is designed for high-definition CRT display, video output applications. Features of the 2SA1369-T11-1G are:(1)high hFE= 400 to 800;(2)high collector current (ICM= -3 A, Ic= -1.5 A);(3)small VCEO(sat)= -0.25 V typ @ Ic=-1 A,IB= -20 mA;(4)high collector dissipation Pc= 500 mW;(5)small package for mounting. And it can be used in small type motor drive for VCR, tape desk, player, drive for relay.

The absolute maximum ratings of the 2SA1369-T11-1G can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: 150 maximum;(3)collector to base voltage: -30 V;(4)collector to emitter voltage: -20 V;(5)emitter to base voltage: -6.0 V;(6)collector current (DC): -3 A;(7)collector current (pulse): -1.5 A;(8)collector dissipation: 500 mW.

The electrical characteristics of the 2SA1369-T11-1G can be summarized as:(1)collector cutoff current: -0.1 uA;(2)emitter curoff current: -0.1 uA;(3)DC current gain: 400 to 1200;(4)gain-bandwidth product: 90 MHz;(5)C-E saturation voltage: -20 V;(6)B-E saturation voltage: -6 V;(7)C-B breakdown voltage: -30 V;(8)C-E breakdown voltage: -20 V;(9)E-B breakdown voltage: -6 V;(10)output capacitance: 37 pF. If you want to know more information such as the electrical characteristics about the device, please download the datasheet in www.seekic.com or www.chinaicmart.com .