2SA1365-T112-1F

The 2SA1365-T112-1F is designed as one kind of PNP / NPN epitaxial planar silicon transistor that is designed for high-definition CRT display, video output applications. Features of the 2SA1365-T112-1F are:(1)low collector to emitter saturation voltage VCE(sat)= -0.2 V typ.;(2)excellent linearity of DC dorward current gain;(3)super mini package for easy mounting;(4)high collector current ICM= -1 A;(5)high gain band width product fT= 180 MHz typ. And it can be used in small type motor drive for VCR, tape desk, player, drive for relay.

The absolute maximum ratings of the 2SA1365-T112-1F can be summarized as:(1)storage temperature: -55 to +125 ;(2)junction temperature: 125 maximum;(3)collector to base voltage: -25 V;(4)collector to emitter voltage: -20 V;(5)emitter to base voltage: -4.0 V;(6)collector current (DC): -700 mA;(7)collector dissipation: 150 mW.

The electrical characteristics of the 2SA1365-T112-1F can be summarized as:(1)collector cutoff current: -1 uA;(2)emitter curoff current: -1 uA;(3)DC current gain: 150 to 800;(4)gain-bandwidth product: 180 MHz;(5)C-E saturation voltage: -0.2 to -0.5 V;(6)B-E saturation voltage: -4 V;(7)C-B breakdown voltage: -25 V;(8)C-E breakdown voltage: -20 V;(9)E-B breakdown voltage: -4 V. If you want to know more information such as the electrical characteristics about the 2SA1365-T112-1F, please download the datasheet in www.seekic.com or www.chinaicmart.com .