2SA1362-GR

The 2SA1362-GR is designed as one kind of silicon PNP epitaxial type (PCT process) that is designed for hlow frequency power amplifier applications and power switching applications. Features of the 2SA1362-GR are:(1)high DC current gain: hFE= 120 to 400;(2)low saturation voltage: VCE(sat)= -0.2 V (max.) (Ic= -400 mA, IB= -8 mA);(3)suitable for driver stage of small motor;(4)small package.

The absolute maximum ratings of the 2SA1362-GR can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: 150 maximum;(3)collector to base voltage: -15 V;(4)collector to emitter voltage: -15 V;(5)emitter to base voltage: -5.0 V;(6)collector current (DC): -800 mA;(7)collector dissipation: -200 mW.

The electrical characteristics of the 2SA1362-GR can be summarized as:(1)collector cutoff current: -100 nA;(2)emitter curoff current: -100 nA;(3)DC current gain: 120 to 400;(4)gain-bandwidth product: 120 MHz;(5)C-E saturation voltage: -0.2 V;(6)B-E saturation voltage: -0.5 V to -0.8 V;(7)C-B breakdown voltage: -15 V. If you want to know more information such as the electrical characteristics about the 2SA1362-GR, please download the datasheet in www.seekic.com or www.chinaicmart.com .