2SA1360-Y

The 2SA1360-Y is designed as one kind of silicon PNP epitaxial type (PCT process) that is designed for hlow frequency power amplifier applications and power switching applications. Features of the device are:(1)complementary to 2SC3423;(2)small collector output capacitance: Cob= 2.5 pF (typ.);(3)high transition frequency: fT= 200 MHz (typ.).

The absolute maximum ratings of the 2SA1360-Y can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: 150 maximum;(3)collector to base voltage: -150 V;(4)collector to emitter voltage: -150 V;(5)emitter to base voltage: -5.0 V;(6)collector current (DC): -50 mA;(7)collector dissipation: 1200 mW.

The electrical characteristics of the 2SA1360-Y can be summarized as:(1)collector cutoff current: -0.1 uA;(2)emitter curoff current: -0.1  uA;(3)DC current gain: 80 to 240;(4)gain-bandwidth product: 200 MHz;(5)C-E saturation voltage: -1.0 V;(6)B-E saturation voltage: -0.8 V;(7)collector output capacitance: 2.5 pF. If you want to know more information such as the electrical characteristics about the 2SA1360-Y, please download the datasheet in www.seekic.com or www.chinaicmart.com .