DescriptionThe 2SA1359-Y is designed as one kind of silicon PNP epitaxial type (PCT process) that is designed for audio frequency power amplifier applications and low speed applications. Features of the 2SA1359-Y are:(1)complementary to 2SC3422;(2)suitable for output stage of 5 watts car radio and...
2SA1359-Y: DescriptionThe 2SA1359-Y is designed as one kind of silicon PNP epitaxial type (PCT process) that is designed for audio frequency power amplifier applications and low speed applications. Features of...
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The 2SA1359-Y is designed as one kind of silicon PNP epitaxial type (PCT process) that is designed for audio frequency power amplifier applications and low speed applications. Features of the 2SA1359-Y are:(1)complementary to 2SC3422;(2)suitable for output stage of 5 watts car radio and car stereo;(3)good linearity of hFE.
The absolute maximum ratings of the 2SA1359-Y can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: 150 maximum;(3)collector to base voltage: -40 V;(4)collector to emitter voltage: -40 V;(5)emitter to base voltage: -5.0 V;(6)collector current (DC): -3 A;(7)collector dissipation: 1500 mW.
The electrical characteristics of the 2SA1359-Y can be summarized as:(1)collector cutoff current: 100 nA;(2)emitter curoff current: 100 nA;(3)DC current gain: 80 to 240;(4)gain-bandwidth product: 100 MHz;(5)C-E saturation voltage: -0.8 V;(6)B-E saturation voltage: -1.0 V;(7)collector output capacitance: 35 pF. If you want to know more information such as the electrical characteristics about the 2SA1359-Y, please download the datasheet in www.seekic.com or www.chinaicmart.com .