2SA1358-Y

The 2SA1358-Y is designed as one kind of silicon PNP epitaxial type (PCT process) that is designed for audio frequency power amplifier applications and low speed applications. Features of the the device are:(1)complementary to 2SC3421;(2)suitable for driver of 60 to 80 watts;(3)high breakdwon voltage.

The absolute maximum ratings of the 2SA1358-Y can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: 150 maximum;(3)collector to base voltage: -120 V;(4)collector to emitter voltage: -120 V;(5)emitter to base voltage: -5.0 V;(6)collector current (DC): -1 A;(7)collector dissipation: 1500 mW.

The electrical characteristics of the 2SA1358-Y can be summarized as:(1)collector cutoff current: -100 nA;(2)emitter curoff current: -100 nA;(3)DC current gain: 80 to 240;(4)gain-bandwidth product: 120 MHz;(5)C-E saturation voltage: -120 V;(6)B-E saturation voltage: -1.0 V;(7)collector output capacitance: 30 pF. If you want to know more information such as the electrical characteristics about the 2SA1358-Y, please download the datasheet in www.seekic.com or www.chinaicmart.com .