2SA1357

The 2SA1357 (TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)) is used in strobe flash applications, audio power amplifier applications, and which possesses high power dissipation (PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C)), low saturation voltage(V CE (sat) = −1.0 V (max))( (IC = −4 A, IB = −0.1 A)), hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A), hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A).
Some parameters of the 2SA1357 are got at Ta(=25°C), VCBO(Collector-base voltage)=-35V, VCEO(Collector-emitter voltage)=-20V, BVEBO(Emitter-base voltage)=-8V, IC(Collector Current(DC))=-5A, ICP(Collector Current(Pulsed(Pulse width = 10 ms (max) Duty cycle = 30% (max))))=-8A, PC(Collector power dissipation, TC=25°C)/(TC=125°C)=1.5/10W, TJ (Junction temperature)=150°C, Tstg(Storage temperature range)=-55 to150°C. Some about the electrical properties of the 2SA1357 are also got at Tc(25°C), ICBO(Collector cut-off current, VCB =-35V, IE = 0)=-100A(Max.), IEBO(Emitter cut-off current, VEB = -8V, IC = 0)=-100A, hFE (1)( classification O: 100 to 200, Y: 160 to 320, VCE = −2 V, IC = −0.5 A)=100(min)/320(max), hFE (2)(VCE = −2 V, IC = −4A)=70(min), VCE (sat) (Collector-emitter saturation voltage, IC = -4A, IB = -0.1A)= -1.0(Max)V, VBE(Base-emitter saturation voltage, IC = -2V, IB = -4A )=-1.5(max)V, fT(Transition frequency, VCE = -2V, IC = -0.5A)=170(Typ.)MHz, Cob(Collector output capacitance, VCB = -10 V, IE = 0, f = 1 MHz)=62(Typ) pF.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SA1357 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).