2SA1357-Y

The 2SA1357-Y is designed as one kind of silicon PNP epitaxial type (PCT process) that can be used in strobe flash applications and audio power amplifier applications. Features of the 2SA1357-Y are:(1)min hFE of 70 at -2V, -4A;(2)-5 A rated collector current;(3)max VCE(sat) of -1.0 V at -4 A Ic;(4)10 W at 25 case temperature.

The absolute maximum ratings of the 2SA1357-Y can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: 150 maximum;(3)collector to base voltage: -35 V;(4)collector to emitter voltage: -20 V;(5)emitter to base voltage: -8.0 V;(6)collector current (DC): -5 A or -8 A;(7)collector dissipation: 1500 mW.

The electrical characteristics of the 2SA1357-Y can be summarized as:(1)collector cutoff current: -100 nA;(2)emitter curoff current: -100 nA;(3)DC current gain: 100 to 320;(4)gain-bandwidth product: 170 MHz;(5)C-E saturation voltage: -20 V;(6)B-E saturation voltage: -1.5 V;(7)collector output capacitance: 62 pF. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .