DescriptionThe 2SA1356 is a silicon PNP epitaxial type(pct process). Features of the 2SA1356 are:(1)low saturation voltage:VCE(sat) =-0.32V(Typ.)(LC=-500MA,IB=-50mA);(2)high collector power dissipation:PC=1.2W(Ta=25);(3)complementary to 2SC3419. The absolute maximum ratings of the 2SA1356 can be...
2SA1356: DescriptionThe 2SA1356 is a silicon PNP epitaxial type(pct process). Features of the 2SA1356 are:(1)low saturation voltage:VCE(sat) =-0.32V(Typ.)(LC=-500MA,IB=-50mA);(2)high collector power dissipa...
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The 2SA1356 is a silicon PNP epitaxial type(pct process).
Features of the 2SA1356 are:(1)low saturation voltage:VCE(sat) =-0.32V(Typ.)(LC=-500MA,IB=-50mA);(2)high collector power dissipation:PC=1.2W(Ta=25);(3)complementary to 2SC3419.
The absolute maximum ratings of the 2SA1356 can be summarized as:(1)collector to base voltage,VCBO:-40V;(2)Collector to emitter voltage,VCER:-40V;(3)Base to emitter voltage,VEBO:-5V;(4)Collector current:IC=-800mA;(5)Collector dissipation:PC=1.2W(TA=25).PC=5W(TC=25);(6junction temperature,Tj:150;(7)Storage temperature range,Tstg:-55 to 150;(8)base current,IB:-80mA.
If you want to know more information such as the electrical characteristics about the 2SA1356, please download the datasheet in www.seekic.com or www.chinaicmart.com .