2SA1349

The 2SA1349 is designed as one kind of silicon PNP epitaxial type (PCT process) that can be used in strobe flash applications and audio power amplifier applications. Features of the 2SA1349 are:(1)min hFE of 70 at -2V, -4A;(2)-5 A rated collector current;(3)max VCE(sat) of -1.0 V at -4 A Ic;(4)10 W at 25 case temperature.

The absolute maximum ratings of the 2SA1349 can be summarized as:(1)storage temperature: -55 to +125 ;(2)junction temperature: 125 maximum;(3)collector to base voltage: -80 V;(4)collector to emitter voltage: -80 V;(5)emitter to base voltage: -5.0 V;(6)collector current (DC): -5 A;(7)collector dissipation: 200 x 2 mW.

The electrical characteristics of the 2SA1349 can be summarized as:(1)collector cutoff current: -0.1 uA;(2)emitter curoff current: -0.1 uA;(3)DC current gain: 200 to 700;(4)C-E saturation voltage: -0.3 V;(6)B-E saturation voltage: -0.6 V;(7)collector output capacitance: 4.2 pF. If you want to know more information such as the electrical characteristics about the device, please download the datasheet in www.seekic.com or www.chinaicmart.com .