2SA1341

      The 2SA1341 is designed as PNP/NPN epitaxial planar silicon transistors which typical applications contains switching circuit,inverter circuit,interface circuit and driver cricuit.
      It has two features.The first one is that it would have built-in bias resistor(R1=47k,R2=47k).The second one is that it would have small-sized package(CP).
      Some absolute maximum ratings of 2SA1341(Ta=25) have ben concluded into several points as follow.The first one is about its collector to base voltage which would be -50V.The second one is about its collector to emitter voltage which would be -50V.The third one is about its emitter to base voltage which would be -10V.The fourth one is about its collector current which would be -100mA.The fifth one is about its peak collector current which would be -200mA.The sixth one is about its collector dissipation which would be 200mW.The seventh one is about its junction temperature which would be 150.The last one is about its storage temperature which would be from -55 to +150.
      Also there are some electrical chcracteristics(Ta=25) about 2SA1341.The first one is about its collector to base cutoff current which would be -0.1(max) A with condition of Vcb=-40V,Ie=0.The second one is about its collector to emitter cutoff current which would be -0.5(max) A with condition of Vce=-40V,Ib=0.The third one is about its emitter cutoff current which would be -30(min) A,-53(typ) A and -80(max) A with condition of Veb=-5V,Ic=0.The fourth one is about its DC current gain which would be 50(min) with condition of Vce=-5V,Ic=-5mA.The fifth one is about its gain band-width product which would be 250(typ) MHz with condition of Vce=-10V,Ic=-5mA.The sixth one is about 2SA1341's output capacitance which would be 3.5(typ) pF with condition of Vcb=-10V,f=1MHz.The seventh one is about its collector to emitter saturation voltage which would be -0.1(typ) V and -0.3(max) V with condition of Ic=-5mA,Ib=-0.25mA.The eighth one is about its collector to base breakdown voltage which would be -50(min) V with condition of Ic=-10A,Ie=0.The last one is about its collector to emitter breakdown voltage which would be -50(min) V with condition of Ic=-100A,Rbe=.For more information please contact us.