2SA1341-TB

The 2SA1341-TB is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in switching citcuit, inverter, interface circuit and driver. Features of the 2SA1341-TB are:(1)built-in bias resistor (R1= 47 k, R2= 47 k);(2)small-sized package (CP).

The absolute maximum ratings of the 2SA1341-TB can be summarized as:(1)collector to base voltage: (-)50 V;(2)collector to emitter voltage: (-)50 V;(3)emitter to base voltage: (-)10 V;(4)collctor current: (-)100 mA;(5)collector current (pulse): (-)200 mA;(6)collector dissipation: 200 mW;(7)junction temperature: 150 ;(8)storage temperature: -55 to +150 .

And the electrical characteristics of the 2SA1341-TB can be summarized as:(1)collector cutoff current: (-)0.1 uA;(2)emitter cutoff current: 30, 53 or 80 uA;(3)DC current gain: 50;(4)gain-bandwidth product: 250 MHz;(5)output capacitance: 3.5 pF;(6)collector to emitter saturation voltage: 0.1 to 0.3 V. If you want to know more information such as the electrical characteristics about the 2SA1341-TB, please download the datasheet in www.seekic.com or www.chinaicmart.com.