2SA1339S

The 2SA1339S is one member of the 2SA1339 family which is designed as the PNP / NPN epitaxial planar silicon transistor that can be used in high-speed switching applications. Features of the 2SA1339S are:(1)very small-sized package permitting sets to be small-sized, slim;(2)high breakdown voltage: VCEO= 50 V;(3)complementary pair transistor having large current capacity and high fT;(4)adoption of FBET process.

The absolute maximum ratings of the 2SA1339S can be summarized as:(1)collector to base voltage: 60 V;(2)collector to emitter voltage: 50 V;(3)emitter to base voltage: 5 V;(4)collector current: 500 mA;(5)collector current (pulse): 800 mA;(6)collector dissipation: 300 mW;(7)junction temperature: 150 ;(8)storage temperature: -55 to +150 .

And the electrical characteristics of the 2SA1339S can be summarized as:(1)collector cutoff current: 0.1 uA;(2)emitter cutoff current: 0.1 uA;(3)DC current gain: 560;(4)gain bandwidth product: 300 MHz;(5)output capacitance: 3.7 pF;(6)rise time: 70 ns;(7)storage time: 400 ns;(8)fall time: 70 ns. If you want to know more information such as the electrical characteristics about the 2SA1339S, please download the datasheet in www.seekic.com or www.chinaicmart.com.