2SA1331-05-TB

The 2SA1331-05-TB is one member of the 2SA1331 family which is designed as the PNP / NPN epitaxial planar silicon transistor that can be used in high-speed switching applications. Features of the 2SA1331-05-TB are:(1)fast switching speed;(2)high breakdown voltage;(3)small sized apckage permitting the 2SA1331 applied sets to be made small and slim.

The absolute maximum ratings of the 2SA1331-05-TB can be summarized as:(1)collector to base voltage: 60 V;(2)collector to emitter voltage: 50 V;(3)emitter to base voltage: 5 V;(4)collector current: 150 mA;(5)collector current (pulse): 400 mA;(6)collector dissipation: 150 mW;(7)junction temperature: 125 ;(8)storage temperature: -55 to +125 .

And the electrical characteristics of the 2SA1331-05-TB can be summarized as:(1)collector cutoff current: 0.1 uA;(2)emitter cutoff current: 0.1 uA;(3)DC current gain: 90 to 400;(4)gain bandwidth product: 100 MHz;(5)output capacitance: 2.7 pF;(6)rise time: 80 ns;(7)storage time: 230 ns;(8)fall time: 160 ns. If you want to know more information such as the electrical characteristics about the 2SA1331-05-TB, please download the datasheet in www.seekic.com or www.chinaicmart.com.