2SA1330-T1B

The 2SA1330-T1B is one member of the 2SA1330 family which is designed as the high voltage amplifier and switching PNP silicon epitaxial transistor that can be used in high-speed switching applications. Features of the 2SA1330-T1B are:(1)high voltage: VCEO= -200 V;(2)high DC current gain: hFE= 90 to 450;(3)complementary to 2SC3360.

The absolute maximum ratings of the 2SA1330-T1B can be summarized as:(1)collector to base voltage: -200 V;(2)collector to emitter voltage: -200 V;(3)emitter to base voltage: -5 V;(4)collector current (DC): -100 mA;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)total power dissipation at 25 ambient temperature: 200 mW.

And the electrical characteristics of the 2SA1330-T1B can be summarized as:(1)collector cutoff current: -100 nA;(2)emitter cutoff current: -100 nA;(3)DC current gain: 90 to 450;(4)gain bandwidth product: 120 MHz;(5)output capacitance: 3.6 pF;(6)rise time: 0.16 us;(7)storage time: 1.3 us;(8)fall time: 0.18 us. If you want to know more information such as the electrical characteristics about the 2SA1330-T1B, please download the datasheet in www.seekic.com or www.chinaicmart.com.