2SA1329S

The 2SA1329S is one member of the 2SA1329 family which is designed as the high voltage amplifier and switching PNP silicon epitaxial transistor that can be used in high-speed switching applications. Features of the 2SA1330-T1B are:(1)high voltage: VCE(sat)= -0.4 V max. at Ic= -6 A;(2)high speed switching time: tstg= 1.0 us (typ.);(3)complementary to 2SC3346.

The absolute maximum ratings of the 2SA1329S can be summarized as:(1)collector to base voltage: -80 V;(2)collector to emitter voltage: -80 V;(3)emitter to base voltage: -6 V;(4)collector current (DC): -12 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)collector power dissipation (Tc=25): 40 W.

And the electrical characteristics of the 2SA1329S can be summarized as:(1)collector cutoff current: -10 uA;(2)emitter cutoff current: -10 uA;(3)DC current gain: 70 to 240;(4)transition frequency: 50 MHz;(5)output capacitance: 400 pF;(6)rise time: 0.3 us;(7)storage time: 1.0 us;(8)fall time: 0.5 us. If you want to know more information such as the electrical characteristics about the 2SA1329S, please download the datasheet in www.seekic.com or www.chinaicmart.com.