2SA1327A

The 2SA1327A is one member of the 2SA1327 family which is designed as the silicon PNP epitaxial transistor that can be used in strobe flash applications and audio power amplifier applications. Features of the 2SA1327A are:(1)high DC current gain: hFE= 70 (min.) (VCE= -2 V, Ic= -1 A);(2)low collector saturation voltage: VCE(sat)= -0.5 V (max.) (Ic= -8 A, IB= -0.4 A);(3)high collector power dissipation: Pc= 20 W (Tc= 25 ).

The absolute maximum ratings of the 2SA1327A can be summarized as:(1)collector to base voltage: -50 V;(2)collector to emitter voltage: -20 V;(3)emitter to base voltage: -8 V;(4)collector current (DC): -10 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)collector power dissipation (Tc=25): 20 W.

And the electrical characteristics of the 2SA1327A can be summarized as:(1)collector cutoff current: -1.0 uA;(2)emitter cutoff current: -1.0 uA;(3)DC current gain: 100 to 320;(4)transition frequency: 45 MHz;(5)output capacitance: 400 pF;(6)base-emitter voltage: -0.95 to -1.5 V. If you want to know more information such as the electrical characteristics about the 2SA1327A, please download the datasheet in www.seekic.com or www.chinaicmart.com.