2SA1327

The 2SA1327 (Silicon PNP Power Transistors) is used in strobe flash applications, audio power amplifier applications, and is also low collector saturation voltage, high current capacity with TO-220Fa package.
Some parameters of the 2SA1327 are got at Ta(=25°C), VCBO(Collector-base voltage , Open emitte)=-50V, VCEO(Collector-emitter voltage, Open base)=-20V, VEBO(Emitter-base voltage, Open collector)=-8V, IC(Collector Current(DC))=-10A, ICP(Collector current-peak)=-20A, PC(Collector power dissipation, TC=25°C)/(Ta=25°C)=20/2W, TJ (Junction temperature)=150°C, Tstg(Storage temperature range)=-55 to150°C. Some about the electrical properties of the 2SA1327 are also got at Tj(25°C), ICBO(Collector cut-off current, VCB =-50V, IE = 0)=-1.0A(Max.), IEBO(Emitter cut-off current, VEB = -8V, IC = 0)=-1.0A, hFE (1)( classification O: 100 to 200, Y: 160 to 320, IC=-1A ; VCE=-2V)=100(min)/320(max), hFE (2)( IC=-8A ; VCE=-2V)=70(min), V CE (sat) (Collector-emitter saturation voltage, IC = -8A, IB = -0.4A)= -0.5(Max)V, VBE(Base-emitter saturation voltage, IC = -8V, IB = -2A )=-1.5(max)V, fT(Transition frequency, VCE = -2V, IC = -1A)=45(Typ.)MHz, Cob(Output capacitance, IE=0 ; VCB=-10V; f=1MHz)=400(Typ) pF, V(BR)CEO(Collector-emitter breakdown voltage, IC=-10mA , IB=0)=-20(Min)V.