2SA1320

      The 2SA1320 (TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)) is used in color TV chroma output applications, high voltage switching applications, and which possesses high voltage (VCEO= -250V), low  Cre=1.8pF, complement to 2SC3503/KSC3503.
      Some parameters of the 2SA1320 are got at Ta(=25°C), VCBO(Collector-base voltage)=-250V, VCEO(Collector-emitter voltage)=-250V, VEBO(Emitter-base voltage)=-5V, IB (Base current)=-20mA, IC(Collector Current(DC))=-50mA, ICP(Collector Current(Pulse))=-100mA, PC(Total Device Dissipation)=-0.6W, TJ , Tstg(Junction and Storage temperature )=150, -55 to 150°C. Some about the electrical properties of the 2SA1320  are also got at Ta(25°C), ICBO(Collector cut-off current, VCB =-200V, IE = 0)=-0.1A(Max.), IEBO(Emitter cut-off current, VEB = -5V, IC = 0)=-0.1A, hFE (DC Current Gain, VCE = -20 V, IC = -25 mA,)=50(min), VCE (sat) (Collector-emitter saturation voltage, IC = -10mA, IB = -1mA)= -1.5(Max)V, VBE(Base-emitter saturation voltage, VCE = −20 V, IC = −25 mA) =-0.75(Typ)V, fT(Transition frequency, VCE = -10V, IC = -10mA)=60(min)/80(Typ.)MHz, Cob(Collector output capacitance, VCB = -30 V, IE = 0, f = 1 MHz)=3.1(Typ)pF, Cre (Reverse Transfer Capacitance)=1.8(max.)pF, BVCBO(Collector-Base Breakdown Voltage, IC = - 10µA, IE = 0)=-300(Min)V, V(BR)CEO(Collecto- Emitter Breakdown Voltage, IC = - 1mA, IB = 0)=-250V(min).
      Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SA1320 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).